Appearance
Ch31(3/3):压电与力学求解器
Sentaurus Device 提供了两个模型(应变和应力)来计算 GaN 器件中的极化效应。它们可以在命令文件的 Physics 部分中激活:
tcl
Physics {
Piezoelectric_Polarization (strain)
Piezoelectric_Polarization (stress)
}应变模型
压电极化矢量 可以表示为局部应变张量 的函数:
其中 是自发极化矢量 [C/cm²], 是应变-电荷压电系数 [C/cm²]。
应力模型
应力模型计算完整极化矢量(张量形式),不做简化假设:
其中 是压电系数 [cm/V], 是应力张量 [Pa]。
基于极化矢量,压电电荷根据下式计算:
该值被添加到泊松方程的右边。
力学求解器
NOTE
Sentaurus Device 中的力学求解器是一个实验性功能,在未来版本中可能会被修改。
在器件仿真过程中,应力张量可能作为解变量的函数而变化。例如:
- 不同材料具有不同的热膨胀系数。这种热失配导致应力随器件晶格温度变化而变化。
- GaN HEMT 的电退化提出由于与逆压电效应相关的过度应力形成缺陷。在这种情况下,应力张量随局部电场变化。
Sentaurus Device 在 Solve 部分提供了 Mechanics 语句,以响应偏置条件的变化重新计算应力张量。
Sentaurus Device 依赖 Sentaurus Interconnect 来更新应力张量。Solve 部分中的 Mechanics 语句执行以下操作:
- Sentaurus Device 创建一个包含当前解变量(如静电势 或晶格温度 )的输入结构(TDR 文件)以及 Sentaurus Interconnect 命令文件。
- Sentaurus Device 调用 Sentaurus Interconnect。
- Sentaurus Interconnect 更新机械应力并产生输出 TDR 文件。
- Sentaurus Device 读取 Sentaurus Interconnect 生成的 TDR 文件并更新应力张量。
参考文献
[1] J. Bardeen and W. Shockley, "Deformation Potentials and Mobilities in Non-Planar Crystals," Physical Review, vol. 80, no. 1, pp. 72–80, 1950.
[2] I. Goroff and L. Kleinman, "Deformation Potentials in Silicon. III. Effects of a General Strain on Conduction and Valence Levels," Physical Review, vol. 132, no. 3, pp. 1080–1084, 1963.
[3] J. J. Wortman, J. R. Hauser, and R. M. Burger, "Effect of Mechanical Stress on p-n Junction Device Characteristics," Journal of Applied Physics, vol. 35, no. 7, pp. 2122–2131, 1964.
[4] P. Smeys, Geometry and Stress Effects in Scaled Integrated Circuit Isolation Technologies, PhD thesis, Stanford University, Stanford, CA, USA, August 1996.
[5] M. Lades et al., "Analysis of Piezoresistive Effects in Silicon Structures Using Multidimensional Process and Device Simulation," in Simulation of Semiconductor Devices and Processes (SISDEP), vol. 6, Erlangen, Germany, pp. 22–25, September 1995.
[6] J. L. Egley and D. Chidambarrao, "Strain Effects on Device Characteristics: Implementation in Drift-Diffusion Simulators," Solid-State Electronics, vol. 36, no. 12, pp. 1653–1664, 1993.
[7] K. Matsuda et al., "Nonlinear piezoresistance effects in silicon," Journal of Applied Physics, vol. 73, no. 4, pp. 1838–1847, 1993.
[8] J. F. Nye, Physical Properties of Crystals, Oxford: Clarendon Press, 1985.
[9] G. L. Bir and G. E. Pikus, Symmetry and Strain-Induced Effects in Semiconductors, New York: John Wiley & Sons, 1974.
[10] C. Herring and E. Vogt, "Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering," Physical Review, vol. 101, no. 3, pp. 944–961, 1956.
[11] E. Ungersboeck et al., "The Effect of General Strain on the Band Structure and Electron Mobility of Silicon," IEEE Transactions on Electron Devices, vol. 54, no. 9, pp. 2183–2190, 2007.
[12] T. Manku and A. Nathan, "Valence energy-band structure for strained group-IV semiconductors," Journal of Applied Physics, vol. 73, no. 3, pp. 1205–1213, 1993.
[13] V. Sverdlov et al., "Effects of Shear Strain on the Conduction Band in Silicon: An Efficient Two-Band k·p Theory," in Proceedings of the 37th European Solid-State Device Research Conference (ESSDERC), Munich, Germany, pp. 386–389, September 2007.
[14] F. L. Madarasz, J. E. Lang, and P. M. Hemeger, "Effective masses for nonparabolic bands in p-type silicon," Journal of Applied Physics, vol. 52, no. 7, pp. 4646–4648, 1981.
[15] C.Y.-P. Chao and S. L. Chuang, "Spin-orbit-coupling effects on the valence-band structure of strained semiconductor quantum wells," Physical Review B, vol. 46, no. 7, pp. 4110–4122, 1992.
[16] M. V. Fischetti and S. E. Laux, "Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys," Journal of Applied Physics, vol. 80, no. 4, pp. 2234–2252, 1996.
[17] C. Hermann and C. Weisbuch, "k·p perturbation theory in III-V compounds and alloys: a reexamination," Physical Review B, vol. 15, no. 2, pp. 823–833, 1977.
[18] V. Ariel-Altschul, E. Finkman, and G. Bahir, "Approximations for Carrier Density in Nonparabolic Semiconductors," IEEE Transactions on Electron Devices, vol. 39, no. 6, pp. 1312–1316, 1992.
[19] S. Reggiani, Report on the Low-Field Carrier Mobility Model in MOSFETs with biaxial/uniaxial stress conditions, Internal Report, Advanced Research Center on Electronic Systems (ARCES), University of Bologna, Bologna, Italy, 2009.
[20] S. Dhar et al., "Electron Mobility Model for Strained-Si Devices," IEEE Transactions on Electron Devices, vol. 52, no. 4, pp. 527–533, 2005.
[21] E. Ungersboeck et al., "Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon," in 11th International Workshop on Computational Electronics (IWCE), Vienna, Austria, pp. 141–142, May 2006.
[22] F. Stern and W. E. Howard, "Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit," Physical Review, vol. 163, no. 3. pp. 816–835, 1967.
[23] O. Penzin, L. Smith, and F. O. Heinz, "Low Field Mobility Model for MOSFET Stress and Surface/Channel Orientation Effects," in 42nd IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, December 2011.
[24] B. Obradovic et al., "A Physically-Based Analytic Model for Stress-Induced Hole Mobility Enhancement," in 10th International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA, pp. 26–27, October 2004.
[25] L. Smith et al., "Exploring the Limits of Stress-Enhanced Hole Mobility," IEEE Electron Device Letters, vol. 26, no. 9, pp. 652–654, 2005.
[26] J. R. Watling, A. Asenov, and J. R. Barker, "Efficient Hole Transport Model in Warped Bands for Use in the Simulation of Si/SiGe MOSFETs," in International Workshop on Computational Electronics (IWCE), Osaka, Japan, pp. 96–99, October 1998.
[27] Z. Wang, Modélisation de la piézorésistivité du Silicium: Application à la simulation de dispositifs M.O.S., PhD thesis, Université des Sciences et Technologies de Lille, Lille, France, 1994.
[28] Y. Kanda, "A Graphical Representation of the Piezoresistance Coefficients in Silicon," IEEE Transactions on Electron Devices, vol. ED-29, no. 1, pp. 64–70, 1982.
[29] A. Kumar et al., "A Simple, Unified 3D Stress Model for Device Design in Stress-Enhanced Mobility Technologies," in International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA, pp. 300–303, September, 2012.
[30] O. Ambacher et al., "Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures," Journal of Applied Physics, vol. 85, no. 6, pp. 3222–3233, 1999.
[31] O. Ambacher et al., "Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures," Journal of Applied Physics, vol. 87, no. 1, pp. 334–344, 2000.
[32] A. Ashok et al., "Importance of the Gate-Dependent Polarization Charge on the Operation of GaN HEMTs," IEEE Transactions on Electron Devices, vol. 56, no. 5, pp. 998–1006, 2009.
[33] G. Y. Huang and C. M. Tan, "Electrical–Thermal–Stress Coupled-Field Effect in SOI and Partial SOI Lateral Power Diode," IEEE Transactions on Power Electronics, vol. 26, no. 6, pp. 1723–1732, 2011.
[34] C. M. Tan and G. Huang, "Comparison of SOI and Partial-SOI LDMOSFETs Using Electrical–Thermal–Stress Coupled-Field Effect," IEEE Transactions on Electron Devices, vol. 58, no. 10, pp. 3494–3500, 2011.
[35] J. Joh and J. A. del Alamo, "Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors," in IEDM Technical Digest, San Francisco, CA, USA, pp. 1–4, December 2006.