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Sentaurus Device (SDevice)
状态:✅ Ch1~Ch5 翻译完成(W-2024.09);Ch6~Ch41 待翻译。
来源
- PDF 文件:
sdevice_ug.pdf - 手册标题:SentaurusTM Device User Guide
- 版本:W-2024.09 (July 2024)
工具定位
SDevice 是器件求解核心,负责电学/热学/光学及多物理耦合仿真。
输入/输出速查
| 类型 | 典型内容 |
|---|---|
| 输入 | 结构/网格文件、命令文件、参数文件、模型开关 |
| 输出 | 电流电压结果、场分布、物理量分布、日志与收敛信息 |
手册结构(四大部分)
- Part I:入门与建模主线
- Part II:物理模型全集
- Part III:数值方法与接口
- Part IV:语法与命令文件总览(Appendix G)
高频命令块
File/Device/ElectrodePhysics/MathSolve/Plot/System
最小求解流程
- 先稳态初值(Poisson 或弱耦合)
- 再强耦合(Poisson + carriers)
- 做
Quasistationary参数扫描 - 需要时做
Transient时域分析
常见坑点
- 网格质量不足导致收敛失败。
- 参数文件来源与版本不一致。
Physics分层覆盖关系理解错误。Solve步长过激导致伪失败。
第 2 轮完善清单
- [ ] 补 5 个命令块最小模板(MOS/二极管/BJT 等)
- [ ] 补"收敛失败→排障路径"决策树
- [ ] 补常用物理模型组合推荐(按器件类型)
- [ ] 补与 SProcess/SMesh 联动的参数追溯规范
翻译进度(W-2024.09)
翻译说明:标题汉化、技术术语保留英文、代码块保留原样、表格保留格式。
| 章节 | 标题 | 行数 | 状态 |
|---|---|---|---|
| Ch1 | Introduction to Sentaurus Device | ~300 | ✅ |
| Ch2 | Specifying Physical Devices | 1187 | ✅ |
| Ch3 | Mixed-Mode Simulations | 810 | ✅ |
| Ch4 | Performing Numeric Experiments | 2001 | ✅ |
| Ch5 | Simulation Results | 1109 | ✅ |
| Ch6 | Numeric and Software-Related Issues | — | ❌ |
| Ch7 | Poisson Equation and Quasi-Fermi Potentials | — | ❌ |
| Ch8 | Carrier Transport Equations in Semiconductors | — | ❌ |
| Ch9 | Lattice and Carrier Temperature Equations | — | ❌ |
| Ch10 | Boundary Conditions | — | ❌ |
| Ch11 | Transport Equations in Metals, Organic Materials, and Disordered Media | — | ❌ |
| Ch12 | Semiconductor Band Structure | — | ❌ |
| Ch13 | Incomplete Ionization | — | ❌ |
| Ch14 | Quantization | — | ❌ |
| Ch15 | Mobility | — | ❌ |
| Ch16 | Generation–Recombination | — | ❌ |
| Ch17 | Traps and Fixed Charges | — | ❌ |
| Ch18 | Phase and State Transitions | — | ❌ |
| Ch19 | Degradation | — | ❌ |
| Ch20 | Organic Devices | — | ❌ |
| Ch21 | Optical Generation | — | ❌ |
| Ch22 | Radiation | — | ❌ |
| Ch23 | Noise, Fluctuations, and Sensitivity | — | ❌ |
| Ch24 | Tunneling | — | ❌ |
| Ch25 | Hot-Carrier Injection | — | ❌ |
| Ch26 | Heterostructure Device Simulation | — | ❌ |
| Ch27 | Energy-Dependent Parameters | — | ❌ |
| Ch28 | Anisotropic Properties | — | ❌ |
| Ch29 | Ferroelectric Materials | — | ❌ |
| Ch30 | (编号缺失) | — | ❌ |
| Ch31 | Mechanical Stress | — | ❌ |
| Ch32 | Galvanic Transport | — | ❌ |
| Ch33 | Thermal Properties | — | ❌ |
| Ch34 | Light-Emitting Diodes | — | ❌ |
| Ch35 | Quantum Wells | — | ❌ |
| Ch36 | Kinetic Monte Carlo MIM Transport | — | ❌ |
| Ch37 | Kinetic Monte Carlo ReRAM | — | ❌ |
| Ch38 | Numeric Methods | — | ❌ |
| Ch39 | Physical Model Interface | — | ❌ |
| Ch40 | Tcl Interfaces | — | ❌ |
| Ch41 | Python Interface | — | ❌ |
已完成:5/41 章(Ch1~Ch5)| 2026-03-29